Abstract: The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room ...
Abstract: An 1500 nm thick collector layer is adopted in the uni-travelling-carrier photodiode (UTC-PD) to reduce the PD's capacitance, while the PD's diameter is set to be 20 μm for better saturation ...
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