Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, well beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) ...
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