By using these parts in bare die form, Apex has been able to increase the levels of integration offered by these power modules. According to a study commissioned by the company, such modules are ...

Cree has introduced its first fully qualified silicon carbide (SiC) mosfet power devices in “bare die” or chip form for use in power electronics modules. In traditional mosfet packages the parasitic ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...

These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...

STMicroelectronics, a global semiconductor company will supply BorgWarner the latest third generation 750V silicon carbide (SiC) power MOSFETs dice for their proprietary Viper-based power module. This ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

Yole Développement, a group of market research, technology analysis, and strategy consulting companies based in Lyon, France, has examined silicon-carbide (SiC) adoption for automotive applications.