Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...

The 14nm FinFET technology will allow for a 42 percent reduction in power consumption in a 144MP sensor while capturing images at 10fps. South Korean tech giant, Samsung, has unveiled a new 14nm ...

Samsung may not return to making Apple's A-series processors in 2018 as once thought, with a new report claiming chip producer TSMC's 7-nanometer FinFET fabrication process could help the firm retain ...

ARM has announced that it is making a multi-core, 64-bit ARM v8-A processor test chip using TSMC’s 10nm FinFET process technology. The physical design for the chip was finalized and sent to TSMC ...

A new technique uses standard chip fab methods to fabricate the building block of a timing device, critical to all microprocessors. Currently, this timing device, known as an acoustic resonator, must ...

A method of repurposing existing techniques to produce a microprocessor timing device in a standard chip fab plant could address supply chain and security weak points. (Photo courtesy of Second Bay ...