New system extends ASM’s portfolio of industry benchmark single wafer silicon carbide epitaxy systems, the 6” PE1O6 and 8” PE1O8 systems, with a higher throughput, lower cost of ownership, dual ...
Hydrogel NAND gate; long-distance remote epitaxy; PAM-8 receiver.
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Once considered quality problems, substrate defects now enable precise control of semiconductor crystal growth
A team led by researchers at Rensselaer Polytechnic Institute (RPI) has made a breakthrough in semiconductor development that could reshape the way we produce computer chips, optoelectronics and ...
Scientists have grown thin films of two different crystalline materials on top of each other using an innovative technique called “dative epitaxy.” The researchers discovered the method by surprise.
A groundbreaking study on van der Waals (vdW) epitaxy has introduced new possibilities in the production of wafer-scale, single-crystal molecular films, addressing a longstanding challenge in ...
Germanium was the material of choice in the early history of electronic devices, and due to its high charge carrier mobility, it's making a comeback. It's generally grown on expensive single-crystal ...
(Nanowerk News) IBM scientists in Zurich and Yorktown Heights, New York have unveiled a breakthrough approach in two publications for growing and integrating nano-sized III-V semiconductor devices on ...
Dublin, Feb. 28, 2024 (GLOBE NEWSWIRE) -- The "Molecular Beam Epitaxy Market - A Global and Regional Analysis, 2023-2033" report has been added to ResearchAndMarkets.com's offering. A newly compiled ...
Researchers demonstrate strain-free van der Waals epitaxy of the elemental semiconductor germanium grown on mica, which has implications ranging from faster integrated circuits to high-efficiency ...
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